? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t j = 25c to 150c 2500 v v cgr t j = 25c to 150c, r ge = 1m 2500 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c ( chip capability ) 170 a i c110 t c = 110c 75 a i lrms t c = 25c (lead rms limit) 160 a i cm t c = 25c, v ge = 20v, 1ms 530 a ssoa v ge = 15v, t vj = 125c, r g = 1 i cm = 200 a (rbsoa) clamped inductive load @ 0.8 ? v ces p c t c = 25c 780 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c m d mounting torque ( ixgk ) 1.13/10 nm/lb.in. f c mounting force ( ixgx ) 20..120/4.5..27 n/lb. weight to-264 10 g plus247 6 g ds99826b(07/10) IXGK75N250 ixgx75n250 v ces = 2500v i c110 = 75a v ce(sat) 2.7v high voltage igbts for capacitor discharge applications features very high peak current capability low saturation voltage mos gate turn-on rugged npt structure molding epoxies meet ul 94v-0 flammability classification advantages easy to mount space savings high power density applications capacitor discharge pulser circuits symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1ma, v ce = 0v 2500 v v ge(th) i c = 4ma, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 50 a t j = 125c 5 ma i ges v ce = 0v, v ge = 20v 200 na v ce(sat) i c = 75a, v ge = 15v, note 1 2.7 v i c = 150a 3.6 v preliminary technical information g = gate e = emitter c = collector tab = collector plus247 tm (ixgx) tab g c e to-264 (ixgk) e g c tab
ixys reserves the right to change limits, test conditions, and dimensions. IXGK75N250 ixgx75n250 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. to-264 aa ( ixgk) outline dim. millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 terminals: 1 - gate 2 - collector 3 - emitter plus247 tm (ixgx) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 *additional provision for lead-to-lead voltage isolation are required at v ce >1200v. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 35 58 s c ies 9000 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 345 pf c res 110 pf q g 410 nc q ge i c = 75a, v ge = 15v, v ce = 0.5 ? v ces 63 nc q gc 175 nc t d(on) 55 ns t r 225 ns t d(off) 270 ns t f 455 ns r thjc 0.16 c/w r thck 0.15 c/w resistive switching times i c = 150a, v ge = 15v v ce = 1250v, r g = 1 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. terminals: 1 = gate 2,4 = collector 3 = emitter back side
? 2010 ixys corporation, all rights reserved IXGK75N250 ixgx75n250 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v ce - volts i c - amperes v ge = 25v 20v 10v 5v 15v fig. 2. output characteristics @ t j = 125oc 0 50 100 150 200 250 300 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 v ce - volts i c - amperes v ge = 25v 20v 15v 5v 10v 15v fig. 3. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 300a i c = 75a i c = 150a fig. 4. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 6 8 10 12 14 16 18 20 22 24 26 v ge - volts v ce - volts i c = 300a t j = 25oc 75a 150a fig. 5. input admittance 0 50 100 150 200 250 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc fig. 6. transconductance 0 20 40 60 80 100 120 0 50 100 150 200 250 i c - amperes g f s - siemens t j = - 40oc 125oc 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGK75N250 ixgx75n250 fig. 10. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 q g - nanocoulombs v ge - volts v ce = 1000v i c = 75a i g = 10 ma fig. 9. reverse-bias safe operating area 0 25 50 75 100 125 150 175 200 225 250 500 750 1000 1250 1500 1750 2000 2250 2500 v ce - volts i c - amperes t j = 125oc r g = 1 ? dv / dt < 10v / ns fig. 8. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1mhz c ies c oes c res
? 2010 ixys corporation, all rights reserved IXGK75N250 ixgx75n250 fig. 12. resistive turn-on rise time vs. collector current 0 100 200 300 400 500 600 75 100 125 150 175 200 225 250 275 300 i c - amperes t r - nanoseconds t j = 125oc t j = 25oc r g = 1 ? , v ge = 15v v ce = 1250v fig. 13. resistive turn-on switching times vs. gate resistance 100 200 300 400 500 600 700 800 900 12345678910 r g - ohms t r - nanoseconds 40 45 50 55 60 65 70 75 80 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 300a i c = 150a fig. 14. resistive turn-off switching times vs. junction temperature 0 100 200 300 400 500 600 700 800 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 50 100 150 200 250 300 350 400 450 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 1250v i c = 300a i c = 150a fig. 15. resistive turn-off switching times vs. collector current 0 200 400 600 800 1000 1200 1400 1600 1800 2000 75 100 125 150 175 200 225 250 275 300 i c - amperes t f - nanoseconds 80 120 160 200 240 280 320 360 400 440 480 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 1250v t j = 125oc, 25oc fig. 11. resistive turn-on rise time vs. junction temperature 0 100 200 300 400 500 600 700 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v ge = 15v v ce = 1250v i c = 300a i c = 150a fig. 16. resistive turn-off switching times vs. gate resistance 200 220 240 260 280 300 320 340 360 380 12345678910 r g - ohms t f - nanoseconds 75 150 225 300 375 450 525 600 675 750 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 150a, 300a ixys ref: ixg_75n250(9p)87-10-10
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